IR51HD224中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

Description

The IR51H(D)XXX are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET? power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge.

Features

? Output Power MOSFETs in half-bridge configuration

? High side gate drive designed for bootstrap operation

? Bootstrap diode integrated into package (HD type)

? Accurate timing control for both Power MOSFETs

Matched delay to get 50 duty cycle

Matched deadtime of 1.2us

? Internal oscillator with programmable frequency

? 15.6V Zener clamped Vcc for offline operation

? Half-bridge output is out of phase with RT

? Micropower startup