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IRD3910R

包裝:卷帶(TR) 封裝/外殼:DO-203AB,DO-5,接線(xiàn)柱 類(lèi)別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE GEN PURP 100V 30A DO203AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

IRFR3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFR3910

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤115m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR3910

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR3910

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRFR3910PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3910PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3910TR

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3910TR

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR3910TR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR3910TRLPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910TRPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910TRPBF

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRFRU3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFRU3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFU3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFU3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IRD3910R

  • 制造商:

    Vishay General Semiconductor - Diodes Division

  • 類(lèi)別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝:

    卷帶(TR)

  • 二極管類(lèi)型:

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io):

    30A

  • 速度:

    快速恢復(fù) =< 500ns,> 200mA(Io)

  • 安裝類(lèi)型:

    底座,接線(xiàn)柱安裝

  • 封裝/外殼:

    DO-203AB,DO-5,接線(xiàn)柱

  • 供應(yīng)商器件封裝:

    DO-203AB(DO-5)

  • 工作溫度 - 結(jié):

    -40°C ~ 125°C

  • 描述:

    DIODE GEN PURP 100V 30A DO203AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
專(zhuān)業(yè)模塊
MODULE
8513
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
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IR
24+
MODULE
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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VISHAY
1503+
DO-203
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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IR
23+
10000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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IR
22+
MODULE
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
MODULE
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
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IR
23+
MODULE
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
IR
23+
MODULE
7000
詢(xún)價(jià)
Vishay General Semiconductor -
24+
DO-203AB(DO-5)
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
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更多IRD3910R供應(yīng)商 更新時(shí)間2024-12-26 16:47:00