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IRF1405SPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF1405SPBF
廠(chǎng)商型號(hào)

IRF1405SPBF

功能描述

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

文件大小

240.27 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠(chǎng)商 International Rectifier
企業(yè)簡(jiǎn)稱(chēng)

IRF

中文名稱(chēng)

International Rectifier官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-25 16:03:00

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IRF1405SPBF規(guī)格書(shū)詳情

Description

Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Typical Applications

● Industrial Motor Drive

產(chǎn)品屬性

  • 型號(hào):

    IRF1405SPBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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IR
22+23+
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76111
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22+
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128038
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17+
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6200
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68900
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INFINEON/英飛凌
2022+
50
6600
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IR
2310+
TO-263
6818
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Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
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IR
22+
TO-263
12245
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IOR
24+
TO263
35400
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IR
2025+
TO-263
5185
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