首頁>IRF1503PBF>規(guī)格書詳情
IRF1503PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1503PBF規(guī)格書詳情
Description
Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
產(chǎn)品屬性
- 型號:
IRF1503PBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
TO-220 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
IR |
1816+ |
2027 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
Infineon Technologies |
21+ |
TO2203 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
TO-220 |
68552 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
24+ |
TO-220-3 |
112 |
詢價 | |||
INFINEON/英飛凌 |
23+ |
TO-220 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
IR |
21+ |
65230 |
詢價 | ||||
IR |
24+ |
TO-TO-220AB |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ir |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 |