IRF1740G中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

? Isolated Package

? High Voitage Isolation= 2.5KVRMS ?

? Sink to Lead Creepage Dist.= 4.8mm

? Dynamic dv/dt Rating

? Low Thermal Resistance

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, iow

on-resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional insulating hardware in

commercial-industrial applications. The moulding compound used provides a

high isolation capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100 micron mica

barrier with standard TO-220 product. The Fullpak is mounted to a heatsink

using a single clip or by a single screw fixing.