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IRF2505中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

IRF2505
廠商型號

IRF2505

功能描述

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

文件大小

57.99 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 17:30:00

IRF2505規(guī)格書詳情

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly developmental type TA09295.

Features

? 30A, 200V

? rDS(ON) = 0.085?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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