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IRF2804S-7PPBF規(guī)格書詳情
VDSS = 40V
RDS(on) = 1.6m?
ID = 160A
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
產(chǎn)品屬性
- 型號：
IRF2804S-7PPBF
- 功能描述：
MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263-7 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
TO-263-7 |
12800 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
2022 |
TO263-76P |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
21+ |
TO-263-7 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
22+ |
TO-263 |
54157 |
鄭重承諾只做原裝進口貨 |
詢價 | ||
IR |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
NA |
156 |
專做原裝正品,假一罰百! |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-263-7P |
25800 |
原裝正品支持實單 |
詢價 | ||
IR |
21+ |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 |
