首頁>IRF2807SPBF>規(guī)格書詳情
IRF2807SPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRF2807SPBF規(guī)格書詳情
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF2807L) is available for low profile applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF2807SPBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
21+ |
TO-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
23+ |
TO-263 |
9896 |
詢價 | |||
IR |
22+ |
NA |
100013 |
全新原裝正品現(xiàn)貨 |
詢價 | ||
IR |
22+23+ |
TO-263 |
17819 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
TE/泰科 |
2452+ |
/ |
287692 |
一級代理,原裝正品現(xiàn)貨 |
詢價 | ||
IR |
TO-263 |
5000 |
原裝長期供貨! |
詢價 | |||
IR |
23+ |
TO-263 |
46975 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
INFINEON/英飛凌 |
2407+ |
MOS |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 |
