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IRF2907ZSPBF規(guī)格書詳情
VDSS = 75V
RDS(on) = 4.5m?
ID = 160A
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
產(chǎn)品屬性
- 型號：
IRF2907ZSPBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3530 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
21+ |
TO-263 |
10068 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
IR |
23+ |
D2-PAK |
28000 |
原裝正品 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
22+ |
TO-263 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
D2-PAK |
2500 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
22+ |
TO-263 |
5623 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
2022 |
TO-263 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
