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IRF3415STRLPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low profile applications
● Advanced Process Technology
● Surface Mount (IRF3415S)
● Low-profile through-hole (IRF3415L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF3415STRLPBF
- 功能描述:
MOSFET MOSFT 150V 43A 42mOhm 133.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
原封 □ |
21500 |
INFINEON優(yōu)勢 /原裝現(xiàn)貨長期供應(yīng)現(xiàn)貨支持 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-263-2 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
IR(國際整流器) |
21+ |
N/A |
4573 |
全新原裝虧本出 |
詢價 | ||
IR |
2016+ |
TO-263 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
45000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
IR |
22+ |
TO263-5 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-263-2 |
19850 |
原裝正品,假一賠十 |
詢價 | ||
INFINEON/英飛凌 |
20+ |
TO-263 |
46 |
詢價 | |||
INFINEON |
22+ |
NA |
800 |
原裝正品支持實單 |
詢價 | ||
Infineon Technologies |
24+ |
D2PAK |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 |