IRF510中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRF510規(guī)格書(shū)詳情
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 5.6A, 100V
?rDS(ON)= 0.540?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào)：
IRF510
- 功能描述：
MOSFET N-Chan 100V 5.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NA |
19+ |
74554 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | |||
HA |
23+ |
TO-220 |
65480 |
詢價(jià) | |||
IR |
新 |
1030 |
全新原裝 貨期兩周 |
詢價(jià) | |||
22+ |
5000 |
詢價(jià) | |||||
SEC |
17+ |
TO-220AB |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR/ON |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
VISHAY |
21+ |
TO-220A |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
8000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
2015+ |
TO-220 |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) |
