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IRF5305STRPBF

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF5305STRRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFNJ5305

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFR5305

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5305

PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A)

IRF

International Rectifier

IRFR5305

-60VP-ChannelEnhancementModeMOSFET

GENERALFEATURESVDS=-60V,ID=-30A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR5305

-60VP-ChannelEnhancementModeMOSFET

DESCRIPTION Theusesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR5305PBF

HEXFET?PowerMOSFET(VDSS=-55V,RDS(on)=0.065廓,ID=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

IRF

International Rectifier

IRFR5305PBF

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5305PBF

UltraLowOn-Resistance

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF5305STRLPBF-CUT TAPE

  • 制造商：

    IR

  • 功能描述：

    Single P-Channel 55 V 110 W 63 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

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IR
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IR
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IR
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IOR
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7750
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IR
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IR
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更多IRF5305STRLPBF-CUT TAPE供應(yīng)商 更新時(shí)間2025-3-6 10:29:00

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