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IRF530NPBF規(guī)格書詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF530NPBF
- 功能描述：
MOSFET MOSFT 100V 17A 90mOhm 24.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO220 |
3800 |
詢價(jià) | |||
IR |
23+ |
TO-220 |
12000 |
全新原裝假一賠十 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
INFINEON/英飛凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
INFINEON/IR |
1907+ |
NA |
26100 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
160802 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-220-3 |
35000 |
熱賣原裝正品 |
詢價(jià) | ||
23+ |
TO220 |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | |||
IR |
2019 |
TO-220 |
11 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
