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IRF630中文資料尼爾半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF630
廠商型號(hào)

IRF630

功能描述

N-Channel Power MOSFET

文件大小

620.22 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Nell Semiconductor Co., Ltd
企業(yè)簡稱

NELLSEMI尼爾半導(dǎo)體

中文名稱

尼爾半導(dǎo)體股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-28 18:30:00

IRF630規(guī)格書詳情

DESCRIPTION

The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These transistors can be operated directly from integrated circuits.

FEATURES

● RDS(ON) = 0.40? @ VGS = 10V

● Ultra low gate charge(43nC max.)

● Low reverse transfer capacitance

(CRSS = 80pF typical)

● Fast switching capability

● 100 avalanche energy specified

● Improved dv/dt capability

● 150°C operation temperature

產(chǎn)品屬性

  • 型號(hào):

    IRF630

  • 功能描述:

    MOSFET N-Ch 200 Volt 10 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST(意法半導(dǎo)體)
23+
TO220
6000
誠信服務(wù),絕對(duì)原裝原盤
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ST
24+
TO-220
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
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STM
22+
TO-220-3
40000
詢價(jià)
ST
22+
NA
30000
原裝正品支持實(shí)單
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IR
24+
TO 220
161449
明嘉萊只做原裝正品現(xiàn)貨
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ST意法
21+
TO220
3800
詢價(jià)
INTERNATIONA
23+
原廠封裝
9888
專做原裝正品,假一罰百!
詢價(jià)
STM
NA
16355
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
詢價(jià)
FAIRCHILD/仙童
22+
TO-292
8000
原裝正品支持實(shí)單
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ST
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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