IRF630中文資料尼爾半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
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DESCRIPTION
The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated circuits.
FEATURES
● RDS(ON) = 0.40? @ VGS = 10V
● Ultra low gate charge(43nC max.)
● Low reverse transfer capacitance
(CRSS = 80pF typical)
● Fast switching capability
● 100 avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature
產(chǎn)品屬性
- 型號(hào):
IRF630
- 功能描述:
MOSFET N-Ch 200 Volt 10 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST(意法半導(dǎo)體) |
23+ |
TO220 |
6000 |
誠信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
ST |
24+ |
TO-220 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
STM |
22+ |
TO-220-3 |
40000 |
詢價(jià) | |||
ST |
22+ |
NA |
30000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
161449 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST意法 |
21+ |
TO220 |
3800 |
詢價(jià) | |||
INTERNATIONA |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
STM |
NA |
16355 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
FAIRCHILD/仙童 |
22+ |
TO-292 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
ST |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |