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IRF630S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRF630S
廠商型號

IRF630S

功能描述

Power MOSFET

文件大小

175.32 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-18 23:00:00

IRF630S規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

???

FEATURES

? Halogen-free According to IEC 61249-2-21

??? Definition

? Surface Mount

? Available in Tape and Reel

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Fast Switching

? Ease of Paralleling

? Simple Drive Requirements

? Compliant to RoHS Directive 2002/95/EC

???

產(chǎn)品屬性

  • 型號:

    IRF630S

  • 功能描述:

    MOSFET N-Chan 200V 9.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
IR
21+
TO-263
5587
原裝現(xiàn)貨庫存
詢價
IR
23+
NA/
10115
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
IR/VISHAY
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
詢價
IR
24+
TO 263
161415
明嘉萊只做原裝正品現(xiàn)貨
詢價
IR
24+
D2-PAK
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
IR
23+
TO-263
35890
詢價
IR
24+
TO-263
501310
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
23+
原廠封裝
9888
專做原裝正品,假一罰百!
詢價
FSC
22+23+
TO-263
16529
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價
IR
20+
TO-263
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價