IRF634N中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF634N規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
產品屬性
- 型號：
IRF634N
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
1922+ |
TO-263 |
367 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
IR |
23+ |
NA/ |
4411 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
Vishay Siliconix |
21+ |
TO2203 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
VISHAY/威世 |
11+ |
TO-220 |
11000 |
詢價 | |||
IR |
23+ |
TO-220 |
35890 |
詢價 | |||
IR |
23+ |
TO-263 |
28000 |
原裝正品 |
詢價 | ||
TH/韓國太虹 |
2048+ |
TO-220 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
22+23+ |
TO-220 |
27729 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-220AB |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 |
