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IRF640LPBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRF640LPBF
廠商型號

IRF640LPBF

功能描述

Power MOSFET

文件大小

2.11507 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

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更新時間

2024-11-16 22:59:00

IRF640LPBF規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/SiHF640L) is available for low-profile applications.

FEATURES

? Surface Mount

? Low-Profile Through-Hole

? Available in Tape and Reel

? Dynamic dV/dt Rating

? 150 °C Operating Temperature

? Fast Switching

? Fully Avalanche Rated

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號:

    IRF640LPBF

  • 功能描述:

    MOSFET N-Chan 200V 18 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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