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IRF644S

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswtiching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivieness. ●SurfaceMount ●AvailableinTape&Reel ●Dynamicdv/dtRating ●RepetitiveAvalanche

IRF

International Rectifier

IRF644S

Available in tape and reel

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF644SPBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswtiching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivieness. ●SurfaceMount ●AvailableinTape&Reel ●Dynamicdv/dtRating ●RepetitiveAvalanche

IRF

International Rectifier

IRF644SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF644STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF644STRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI644

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=7.9A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI644

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI644A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.214?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI644B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI644G

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=7.9A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI644G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI644G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI644GPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI644GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI644GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS644

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS644A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=250V ■LowerRDS(ON):0.214Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS644A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10A(Max.)@VDS=

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS644B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    IRF644S

  • 功能描述:

    MOSFET N-Chan 250V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO263
8950
BOM配單專家,發(fā)貨快,價(jià)格低
詢價(jià)
IR
22+
D2-PAK
9450
原裝正品,實(shí)單請聯(lián)系
詢價(jià)
IR
24+
TO-263
501317
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價(jià)
IR
06+
TO-263
14500
自己公司全新庫存絕對有貨
詢價(jià)
IR
23+
7
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
2016+
TO-263
2654
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
更多IRF644S供應(yīng)商 更新時(shí)間2025-1-14 11:04:00