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IRF6622TRPBF規(guī)格書詳情
Description
The IRF6622PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHs Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6622TRPBF
- 功能描述：
MOSFET 25V 1 N-CH HEXFET 6.3mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
BGA |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
IR |
1719+ |
QFN |
484 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
21+ |
FET-2 |
1488 |
絕對有現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十! |
詢價 | ||
IR |
22+ |
QFN |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
IR |
2022 |
DirectFET |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
QFN |
12000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
24+ |
SMD |
25000 |
一級專營品牌全新原裝熱賣 |
詢價 | ||
IR |
QFN |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
23+ |
SMD |
3388 |
原廠原裝正品 |
詢價 | ||
IR |
2223+ |
BGA |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險 |
詢價 |
