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IRF6635TRPBF規(guī)格書詳情
Description
The IRF6635PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHs Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6635TRPBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IOR |
2008 |
DIRECTFET |
65 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 | |||
IR |
24+ |
QFN |
9800 |
一級代理/全新原裝現(xiàn)貨/長期供應! |
詢價 | ||
IR |
22+ |
NA |
4500 |
全新原裝品牌專營 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
9600 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/IR |
22+ |
N/A |
9600 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
IR |
2023+ |
SMD |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
21+ |
QFN |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
Infineon Technologies |
21+ |
DIRECTFET? MX |
4800 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 |
