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IRF6635TRPBF規(guī)格書詳情
Description
The IRF6635PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHs Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6635TRPBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
2022+ |
DirectFET |
57550 |
詢價 | |||
INFINEON/IR |
1907+ |
NA |
9600 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
IR |
21+ |
QFN |
6000 |
原裝正品 |
詢價 | ||
IR |
22+ |
DirectFET |
60000 |
原裝正品 |
詢價 | ||
INFINEON/英飛凌 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
DirectFETMX |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
23+ |
QFN |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
1923+ |
QFN |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價 | ||
IR |
24+ |
DIRECTFET |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 |
