IRF6646中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6646規(guī)格書詳情
Description
The IRF6646 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
RoHS compliant containing no lead or bromide c
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible c
Ultra Low Package Inductance
Optimized for High Frequency Switching c
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques c
產(chǎn)品屬性
- 型號：
IRF6646
- 功能描述：
MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3280 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
IR |
2018+ |
QFN |
6000 |
全新原裝正品現(xiàn)貨,假一賠佰 |
詢價 | ||
IR |
06+ |
SMD |
4770 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
22+ |
DIRECTFET |
60000 |
原裝正品 |
詢價 | ||
Infineon/英飛凌 |
23+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
IOR |
06+ |
QFN |
6000 |
詢價 | |||
Infineon |
23+ |
MG-WDSON-5 |
15500 |
英飛凌優(yōu)勢渠道全系列在售 |
詢價 | ||
IR |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
23+ |
QFN |
20000 |
原裝正品現(xiàn)貨 |
詢價 |
