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IRF6665TRPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6665TRPBF規(guī)格書詳情
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
Features
? Latest MOSFET Silicon technology
? Key parameters optimized for Class-D audio amplifier applications
? Low RDS(on) for improved efficiency
? Low Qg for better THD and improved efficiency
? Low Qrr for better THD and lower EMI
? Low package stray inductance for reduced ringing and lower EMI
? Can deliver up to 100W per channel into 8? with no heatsink
? Dual sided cooling compatible
? Compatible with existing surface mount technologies
? RoHS compliant containing no lead or bromide
? ead-Free (Qualified up to 260°C Reflow)
產(chǎn)品屬性
- 型號：
IRF6665TRPBF
- 功能描述：
MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
SMD |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
IR |
23+ |
NA/ |
3503 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
24+ |
DIRECTFET |
65300 |
一級代理/放心購買! |
詢價 | ||
Infineon/英飛凌 |
23+ |
SMD |
25000 |
原裝正品,假一賠十! |
詢價 | ||
INFINEON/英飛凌 |
22+ |
SMD |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
4800 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
SMD |
159988 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
1948+ |
QFN |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
12+ |
SMD |
6000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/IR |
21+ |
NA |
4800 |
只做原裝,假一罰十 |
詢價 |
