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IRF6726MTRPBF規(guī)格書詳情
Description
The IRF6726MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHS Compliant Containing No Lead and Bromide
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Ideal for CPU Core DC-DC Converters
● Optimized for both Sync.FET and some Control FET application
● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques
● 100 Rg tested
產(chǎn)品屬性
- 型號：
IRF6726MTRPBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+/24+ |
DIRBCTFET |
15000 |
原裝進口、正品保障、合作持久 |
詢價 | ||
IR |
24+ |
DIRBCTFET |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon(英飛凌) |
24+ |
MG-WDSON-5 |
11177 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
22+23+ |
DIRBCTFET |
8000 |
新到現(xiàn)貨，只做原裝進口 |
詢價 | ||
IR |
21+ |
DIRBCTFET |
10080 |
公司只做原裝,誠信經(jīng)營 |
詢價 | ||
IR |
24+ |
DIRBCTFET |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
INFINEON |
24+ |
con |
2500 |
優(yōu)勢庫存,原裝正品 |
詢價 | ||
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
8000 |
只做原裝，歡迎詢價，量大價優(yōu) |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 |
