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IRF7104PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7104PBF規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Adavanced Process Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF7104PBF
- 功能描述：
MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3264 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
SOP-8 |
20700 |
只做原裝正品假一賠十 |
詢價 | ||
IR |
2023+ |
SOP-8 |
3685 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
21+ |
65230 |
詢價 | ||||
Infineon Technologies |
22+ |
8SO |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IRC |
1535+ |
853 |
詢價 | ||||
IR |
18+ |
SOP-8 |
25396 |
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票 |
詢價 | ||
INFINEON/英飛凌 |
2022+ |
95 |
6600 |
只做原裝,假一罰十,長期供貨。 |
詢價 | ||
IR |
23+ |
SOP8 |
7750 |
全新原裝優(yōu)勢 |
詢價 |
