首頁(yè)>IRF7306QPBF>規(guī)格書詳情
IRF7306QPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF7306QPBF規(guī)格書詳情
Description
Specifically designed for Automotive applications, these HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual P Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Automotive [Q101] Qualified
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF7306QPBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
SO-8 |
15000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
22+23+ |
SOP-8 |
16713 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
SOIC-8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
7500 |
詢價(jià) | |||
IR |
19+ |
SOP-8 |
74617 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | ||
IR |
17+ |
SO-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
SO8 |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
65300 |
一級(jí)代理/放心購(gòu)買! |
詢價(jià) | ||
IR |
23+ |
SO8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
