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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF730FI	文件：65.269 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION ?DrainCurrent–ID=3.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF730FP	文件：451.94 Kbytes Page：3 Pages	6.0A400VNCHANNELPOWERMOSFET	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
IRF730PBF	文件：134.68 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730PBF	文件：3.58963 Mbytes Page：7 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF730PBF	文件：1.17645 Mbytes Page：6 Pages	6.5A,400VHeatsinkN-ChannelTypePowerMOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
IRF730PBF	文件：156.83 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730S	文件：262.3 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRF730S	文件：1.42874 Mbytes Page：5 Pages	N-ChannelMOSFET ■Features ●VDS(V)=400V ●ID=5.5A(VGS=10V) ●RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司	KEXIN
IRF730S	文件：173.99 Kbytes Page：9 Pages	RepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730S	文件：192.81 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730SPBF	文件：893.24 Kbytes Page：8 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRFI730B	文件：681.53 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI730G	文件：1.57493 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI730G	文件：914.21 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI730GPBF	文件：923.29 Kbytes Page：7 Pages	HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.	IRF International Rectifier	IRF
IRFI730GPBF	文件：1.57493 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI730GPBF	文件：914.21 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFS730	文件：1.06469 Mbytes Page：6 Pages	N-CHANNELMOSFETinaTO-220FPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN
IRFS730	文件：270.49 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFS730A	文件：266.83 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=400V ■LowerRDS(ON):0.765Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市恒達(dá)億科技有限公司	IRF730FI	ST	23+	TOP220	4500	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售	詢價(jià)
深圳市智創(chuàng)誠芯電子科技有限公司	IRF730F其他IC	IR	TO-220F	貨真價(jià)實(shí),假一罰十	25000		詢價(jià)
深圳市云美電子科技有限公司	IRF730F其他IC	IR	22+	TO-220F	40256	本公司只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IRF730IC	IR	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	IRF730IC	IR	2022	TO220	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市河鋒鑫科技有限公司	IRF730-IR	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF730-IR	IR	23+		8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF730-IR	IR	23+		7000		詢價(jià)
深圳市星佑電子有限公司	IRF730L	IR	05+	原廠原裝	651	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF730L	VishayIR	24+	TO-262	340		詢價(jià)

更多IRF730FI供應(yīng)商更新時(shí)間2025-1-9 16:38:00

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