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IRFI730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI730G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導體

IRFI730G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI730GPBF

HEXFETPowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFI730GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導體

IRFI730GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFS730

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

IRFS730

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS730

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS730A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=400V ■LowerRDS(ON):0.765Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    IRF730STRRPBF

  • 功能描述:

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導體產(chǎn)品-原裝正品
詢價
VISHAY(威世)
23+
TO-263
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
2023+
TO-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
IR
24+
TO-263
35200
一級代理/放心采購
詢價
IR
24+
TO-263
800
原裝現(xiàn)貨
詢價
IR
14+PBF
TO-263
800
現(xiàn)貨
詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
23+
TO-263
3000
原裝正品假一罰百!可開增票!
詢價
更多IRF730STRRPBF供應商 更新時間2025-2-23 14:14:00