IRF7311中文資料友臺半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

The is the highest performance trench

2N-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge

for most of the small power switching and

load switch applications. The meet the RoHS and

Product requirement with full function reliability approved.

IRF7311TR

General Features

VDS = 30V ID =

RDS(ON) < mΩ @ VGS=10 V

RDS(ON) < 18mΩ @ VGS=4.5V

9A

13

Application

Battery protection Load switch Uninterruptible power supply