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IRF7341GTRPbF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRF7341GTRPbF規(guī)格書(shū)詳情
Description
These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
? Advanced Process Technology
? Dual N-Channel MOSFET
? Ultra Low On-Resistance
? 175°C Operating Temperature
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free
? Halogen-Free
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
SOP-8 |
15048 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
SO8 |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
INFINEON |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||||
Infineon |
2023 |
4800 |
公司原裝現(xiàn)貨/支持實(shí)單 |
詢價(jià) | |||
Infineon(英飛凌) |
23+ |
NA |
7000 |
工廠現(xiàn)貨!原裝正品! |
詢價(jià) | ||
INFINEON TECHNOLOGIES |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
SOP-8 |
19316 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) | ||
Infineon Technologies |
24+ |
8-SOIC(0.154,3.90mm 寬) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
60000 |
十年專營(yíng)原裝現(xiàn)貨,假一賠十 |
詢價(jià) |
