IRF7341GTRPbF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

Description

These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.

The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

? Advanced Process Technology

? Dual N-Channel MOSFET

? Ultra Low On-Resistance

? 175°C Operating Temperature

? Repetitive Avalanche Allowed up to Tjmax

? Lead-Free

? Halogen-Free