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IRF7379PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
● Generation V Technology
● Ultra Low On-Resistance
● Complimentary Half Bridge
● Surface Mount
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF7379PBF
- 功能描述：
MOSFET 30V DUAL N/P CH 20V VGS MAX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
8SO |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Infineon Technologies |
21+ |
8SO |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
65300 |
一級(jí)代理/放心購(gòu)買! |
詢價(jià) | ||
IR |
SO-8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
21+ |
SO-8 |
6000 |
原裝正品 |
詢價(jià) | ||
IR |
23+ |
SO-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
05+ |
SO-8 |
5445 |
詢價(jià) | |||
IR |
2021+ |
SO-8 |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
IR |
2020+ |
SO-8 |
8000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) |
