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IRF7402TRPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application.
● Generation V Technology
● Ultra Low On-Resistance
● N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
● Fast Switching
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF7402TRPBF
- 功能描述：
MOSFET MOSFT 20V 6.8A 35mOhm 14nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/IR |
1907+ |
NA |
4000 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
SOIC-8_150mil |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
IR |
22+ |
SOP-8 |
354000 |
詢價(jià) | |||
IOR |
24+ |
原廠原包裝 |
7550 |
優(yōu)勢產(chǎn)品!100%全新原裝現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
新年份 |
SOP-8 |
18433 |
原裝正品現(xiàn)貨,實(shí)單帶TP來談! |
詢價(jià) | ||
IRF |
20+ |
SOP-8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
IR |
11+ |
SO-8 |
655 |
詢價(jià) | |||
IR |
23+ |
SOP8 |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
21+ |
SO-8 |
8820 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
6000 |
面議 |
19 |
SOP8 |
詢價(jià) |
