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IRF7507PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF7507PBF
廠商型號

IRF7507PBF

功能描述

HEXFET?Power MOSFET

文件大小

214.18 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-3 11:18:00

IRF7507PBF規(guī)格書詳情

N-Ch P-Ch

VDSS 20V -20V

RDS(on) 0.135? 0.27?

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

Lead Free

產(chǎn)品屬性

  • 型號:

    IRF7507PBF

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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