IRF820中文資料SUNTAC數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF820規(guī)格書詳情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào):
IRF820
- 功能描述:
MOSFET N-Chan 500V 2.5 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HSMC |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
IR |
23+ |
NA/ |
3750 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
HARRIS(哈利斯) |
23+ |
TO220AB |
6000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
IR |
00+ |
TO-220 |
198 |
詢價(jià) | |||
HI |
24+ |
TO-251 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
23+ |
TO220 |
18689 |
詢價(jià) | |||
IR |
24+ |
DIP |
30617 |
一級(jí)代理全新原裝熱賣 |
詢價(jià) | ||
ST |
23+ |
TO-220 |
28000 |
原裝正品 |
詢價(jià) | ||
IR/FSC |
1738+ |
TO-220 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
SEC |
22+23+ |
TO-220 |
38965 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
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