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IRF8308MTR1PBF規(guī)格書詳情
Description
The IRF8308MPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHs Compliant Containing No Lead and Bromide
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Ideal for CPU Core DC-DC Converters
● Optimized for Sync. FET socket of Sync. Buck Converter
● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques
● 100 Rg tested
產(chǎn)品屬性
- 型號:
IRF8308MTR1PBF
- 功能描述:
MOSFET 30V N-Channel HEXFET Power MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
14+PBF |
DIRECTFET |
48000 |
普通 |
詢價 | ||
IR |
21+ |
DIRECTFET |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
DIRECTFETISOMETRIC |
6000 |
原裝正品 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
IR |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
IR |
22+ |
DIRECTFET |
6521 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
1923+ |
DIRECTFET |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價 | ||
IR |
17+ |
DIRECTFET |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIRECTFET |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Infineon/英飛凌 |
23+ |
MG-WDSON-5 |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 |