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IRF850中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF850
廠商型號(hào)

IRF850

功能描述

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

文件大小

56.15 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-4 10:00:00

人工找貨

IRF850價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

IRF850規(guī)格書(shū)詳情

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 4.5A, 500V

?rDS(ON)= 1.500?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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IR
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