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IRF9952QPBF規(guī)格書詳情
Description
These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF9952QPBF
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VB |
SO8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
24+ |
SOP-8 |
100 |
詢價 | |||
Infineon(英飛凌) |
23+ |
SOP-8 |
7860 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
19+ |
SOP8 |
74802 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
IR |
17+ |
SOP8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP40 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
1716+ |
SOP8 |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價 | ||
IR |
2022+ |
SOP-8 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
IR |
23+ |
SOP-8 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
SOP-8 |
7000 |
詢價 |