首頁>IRF9952QPBF>規(guī)格書詳情

IRF9952QPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF9952QPBF
廠商型號

IRF9952QPBF

功能描述

HEXFET Power MOSFET

文件大小

280.44 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-3 16:42:00

IRF9952QPBF規(guī)格書詳情

Description

These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

● Advanced Process Technology

● Ultra Low On-Resistance

● Dual N and P Channel MOSFET

● Surface Mount

● Available in Tape & Reel

● 150°C Operating Temperature

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRF9952QPBF

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
VB
SO8
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價
IR
24+
SOP-8
100
詢價
Infineon(英飛凌)
23+
SOP-8
7860
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
IR
19+
SOP8
74802
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
IR
17+
SOP8
6200
100%原裝正品現(xiàn)貨
詢價
IR
23+
DIP40
5000
原裝正品,假一罰十
詢價
IR
1716+
SOP8
7500
只做原裝進(jìn)口,假一罰十
詢價
IR
2022+
SOP-8
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價
IR
23+
SOP-8
8000
只做原裝現(xiàn)貨
詢價
IR
23+
SOP-8
7000
詢價