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IRF9952QPBF規(guī)格書詳情
Description
These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free
產品屬性
- 型號：
IRF9952QPBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
SOP8 |
74802 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
IR |
1923+ |
SOP8 |
5000 |
正品原裝品質假一賠十 |
詢價 | ||
IR |
24+ |
SOP-8 |
100 |
詢價 | |||
Infineon Technologies |
21+ |
8SO |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Infineon(英飛凌) |
23+ |
SOP-8 |
7860 |
支持大陸交貨,美金交易。原裝現貨庫存。 |
詢價 | ||
InternationalRectifier |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
IR |
2022+ |
SOP-8 |
30000 |
進口原裝現貨供應,原裝 假一罰十 |
詢價 | ||
IR |
05+ |
原廠原裝 |
20051 |
只做全新原裝真實現貨供應 |
詢價 | ||
IR |
21+ |
SOP-8 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
IR |
24+ |
SOP8 |
5825 |
公司原廠原裝現貨假一罰十!特價出售!強勢庫存! |
詢價 |
