IRF9Z24S中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF9Z24S規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRF9Z24S)
● Low-profile through-hole (IRF9Z24L)
● 175°C Operating Temperature
● Fast Switching
● P- Channel
● Fully Avalanche Rated
產(chǎn)品屬性
- 型號：
IRF9Z24S
- 功能描述：
MOSFET P-Chan 60V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
5587 |
原裝現(xiàn)貨庫存 |
詢價 | ||
IR |
24+ |
TO-263 |
160825 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
1822+ |
TO-263 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR/INFIOEON |
24+23+ |
TO-220 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價 | ||
VISHAY/威世 |
23+ |
TO263 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
23+ |
D2-Pak |
19526 |
詢價 | |||
IR |
20+ |
TO-263 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
VISHAY |
22+ |
NA |
35000 |
全新原裝正品現(xiàn)貨 |
詢價 | ||
IR |
TO-263 |
205182 |
一級代理原裝正品,價格優(yōu)勢,支持實單! |
詢價 | |||
VISHAY |
22+23+ |
TO-263 |
26928 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 |
