IRFBE20中文資料IRF數據手冊PDF規(guī)格書
IRFBE20規(guī)格書詳情
Description
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
產品屬性
- 型號:
IRFBE20
- 功能描述:
MOSFET 800V Single N-Channel HEXFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
30000 |
全新原裝現貨,價格優(yōu)勢 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY專營進口原裝現貨假一賠十 |
詢價 | ||
IR |
2022 |
TO-220 |
80000 |
原裝現貨,OEM渠道,歡迎咨詢 |
詢價 | ||
VISHAY/IR |
16+ |
原廠封裝 |
5950 |
原裝現貨假一罰十 |
詢價 | ||
IR |
1923+ |
TO-220 |
6896 |
原裝進口現貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
IR/VISHAY |
23+ |
D2-PAK |
10000 |
公司只做原裝正品 |
詢價 | ||
IR |
24+ |
TO-220 |
98 |
詢價 | |||
VISHAY/威世 |
23+ |
TO-220 |
90000 |
一定原裝深圳現貨 |
詢價 | ||
VISHAY |
12+/13+ |
TO-220AB |
26850 |
原裝正品現貨庫存價優(yōu) |
詢價 |