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首頁 >IRFC014R>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFD014	文件：171.17 Kbytes Page：6 Pages	PowerMOSFET(Vdss=60V,Rds(on)=0.20ohm,Id=1.7A)	IRF International Rectifier	IRF
IRFD014	文件：2.02521 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD014	文件：2.02521 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD014	文件：2.58557 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD014	文件：868.89 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdge	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD014PBF	文件：2.10193 Mbytes Page：8 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFD014PBF	文件：2.58557 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD014PBF	文件：2.02521 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD014PBF	文件：868.89 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL014	文件：176.76 Kbytes Page：6 Pages	PowerMOSFET(Vdss=60V,Rds(on)=0.20ohm,Id=2.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?E	IRF International Rectifier	IRF
IRFL014	文件：949.69 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL014	文件：1.0036 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL014	文件：1.0036 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL014N	文件：144.1 Kbytes Page：8 Pages	PowerMOSFET(Vdss=55V,Rds(on)=0.16ohm,Id=1.9A) Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor	IRF International Rectifier	IRF
IRFL014NPBF	文件：158.96 Kbytes Page：8 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor	IRF International Rectifier	IRF
IRFL014NPBF	文件：164.33 Kbytes Page：8 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRFL014NTRPBF	文件：1.92767 Mbytes Page：5 Pages	N-ChannelEnhancementModePowerMOSFET GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package.	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
IRFL014NTRPBF	文件：164.33 Kbytes Page：8 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor	IRF International Rectifier	IRF
IRFL014PBF	文件：793.5 Kbytes Page：9 Pages	SurfaceMount,FastSwitching DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?Eas	IRF International Rectifier	IRF
IRFL014PBF	文件：949.69 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號(hào)：
IRFC014R
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRFC014R	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFC014R	IR	23+		8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFC014R	IR	23+		7000		詢價(jià)
瀚佳科技(深圳)有限公司	IRFC024N	IR	24+		65230		詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFC024N	IR	23+		7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IRFC10N65KB	IR	23+	TO220	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多IRFC014R供應(yīng)商更新時(shí)間2025-1-18 14:00:00

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