IRFD110中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 1A, 100V
? rDS(ON) = 0.600?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào)：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA |
10658 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553 |
詢價(jià) | ||
IR |
22+23+ |
DIP |
8000 |
新到現(xiàn)貨，只做原裝進(jìn)口 |
詢價(jià) | ||
IR |
27 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | ||||
IR |
2022 |
DIP |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
IR |
00+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
22+ |
DIP-4 |
9000 |
原裝正品 |
詢價(jià) | ||
IR |
23+ |
DIP4 |
3000 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
24+ |
N/A |
47000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Harris |
24+ |
4-DIP |
43868 |
專注Harris品牌原裝正品代理分銷,認(rèn)準(zhǔn)水星電子 |
詢價(jià) | ||
IR |
2023+ |
DIP4 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) |
