IRFF110中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFF110規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 3.5A, 100V
? rDS(ON) = 0.600?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFF110
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39
- 功能描述：
TRANS MOSFET N-CH 100V 3.5A 3PIN TO-39 - Bulk
- 功能描述：
N CH MOSFET 100V 3.5A TO-20
- 功能描述：
MOSFET N TO-39
- 功能描述：
MOSFET, N, TO-39
- 功能描述：
N CH MOSFET, 100V, 3.5A, TO-205AF; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
3.5A; Drain Source Voltage
- Vds：
100V; On Resistance
- Rds(on)：
600mohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V ;RoHS
- Compliant：
No
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
2020+ |
CAN |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | |||
INTEL |
24+ |
CAN |
35200 |
一級代理/放心采購 |
詢價(jià) | ||
INTERSIL |
24+ |
TO-39 |
1931 |
詢價(jià) | |||
IRFF110 |
3 |
3 |
詢價(jià) | ||||
IR |
21+ |
CAN3 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) | ||
HARRIS |
23+ |
CAN3 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
23+ |
CAN3 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
CAN3 |
7000 |
詢價(jià) | |||
ALLEGOR |
AUCDIP |
3647 |
萊克訊每片來自原廠!價(jià)格超越代理!只做進(jìn)口原裝! |
詢價(jià) | |||
IR |
24+ |
SMD |
4 |
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口 |
詢價(jià) |
