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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFF9220	文件：130.24 Kbytes Page：7 Pages	HEXFET TRANSISTORS THRU-HOLE (TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala	IRF International Rectifier	IRF
IRFF9220	文件：327.78 Kbytes Page：7 Pages	-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs -2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl	Intersil Intersil Corporation	Intersil
IRFF9220	文件：130.24 Kbytes Page：7 Pages	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET??RANSISTORS THRU-HOLE (TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala	IRF International Rectifier	IRF
IRFF9220	文件：16.67 Kbytes Page：1 Pages	P-Channel MOSFET in a Hermetically sealed TO39	SEME-LAB Seme LAB	SEME-LAB
IRFR9220	文件：99.42 Kbytes Page：8 Pages	3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFR9220	文件：169 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?	IRF International Rectifier	IRF
IRFR9220	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9220,SiHFR9220) ?Straightlead(IRFUFU9220,SiHFU9220) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220PBF	文件：1.08269 Mbytes Page：10 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFR9220PBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220PBF	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220PBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220PBF	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TR	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TR	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRL	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號：
IRFF9220
制造商：
International Rectifier
功能描述：
Trans MOSFET P-CH 200V 2.5A 3-Pin TO-39
功能描述：
TRANS MOSFET P-CH 200V 2.5A 3PIN TO-39 - Bulk
制造商：
Rochester Electronics LLC
功能描述：
HEXFET, HI-REL - Bulk
功能描述：
P CH MOSFET, -200V, 2.5A, TO-205AF; Transistor
Polarity：
P Channel; Continuous Drain Current
Id：
-2.5A; Drain Source Voltage
Vds：
-200V; On Resistance
Rds(on)：
1.5ohm; Rds(on) Test Voltage
Vgs：
-10V; Threshold Voltage Vgs
Typ：
-4V ;RoHS
Compliant：
No

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市毅創(chuàng)弘電子科技有限公司	IRFF9220	IR	23+	CAN	66800	原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFF9220	INTERSIL	24+	TO-39	15		詢價(jià)
深圳市星佑電子有限公司	IRFF9220	INTERSIL	05+	原廠原裝	5952	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市弘為電子有限公司	IRFF9220	HARRIS	16+	CAN3	1350	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市永貝爾科技有限公司	IRFF9220	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市錦喆鴻電子有限公司	IRFF9220	HARRIS	21+	CAN3	12588	原裝正品,自己庫存假一罰十	詢價(jià)
深圳市達(dá)恩科技有限公司	IRFF9220	IR	18	CAN	200	進(jìn)口原裝正品優(yōu)勢供應(yīng)	詢價(jià)
深圳市昊創(chuàng)電子有限公司	IRFF9220	IOR	專業(yè)鐵帽	CAN3	1300	原裝鐵帽專營,代理渠道量大可訂貨	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRFF9220	HARRIS	專業(yè)鐵帽	CAN3	67500	鐵帽原裝主營-可開原型號增稅票	詢價(jià)
深圳市納艾斯科技有限公司	IRFF9220	HARRIS	2020+	CAN3	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)

更多IRFF9220供應(yīng)商更新時(shí)間2025-1-9 17:02:00

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