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IRFI3205PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFI3205PBF規(guī)格書(shū)詳情
VDSS = 55V
RDS(on) = 0.008?
ID = 64A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRFI3205PBF
- 功能描述：
MOSFET MOSFT 55V 56A 8mOhm 113.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
23+ |
TO-220(TO-220-3) |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
INFINEON/英飛凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
INFINEON/IR |
1907+ |
NA |
1000 |
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | ||
INFINEON/IR |
24+ |
159577 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | |||
Infineon(英飛凌) |
23+ |
TO220 |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤 |
詢價(jià) | ||
IR |
22+23+ |
TO-220F |
14853 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-220F |
16316 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
VB |
TO-220F |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
Infineon/英飛凌 |
21+ |
TO-220(TO-220-3) |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
400 |
只做原廠渠道 可追溯貨源 |
詢價(jià) |
