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IRFI610B中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

IRFI610B
廠商型號

IRFI610B

功能描述

200V N-Channel MOSFET

文件大小

660.84 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-24 18:49:00

IRFI610B規(guī)格書詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

? 3.3A, 200V, RDS(on) = 1.5? @VGS = 10 V

? Low gate charge ( typical 7.2 nC)

? Low Crss ( typical 6.8 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號:

    IRFI610B

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    200V N-Channel MOSFET

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