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IRFI840GLC中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
IRFI840GLC |
功能描述 | Power MOSFET |
文件大小 |
1.66555 Mbytes |
頁(yè)面數(shù)量 |
8 頁(yè) |
生產(chǎn)廠商 | Vishay Siliconix |
企業(yè)簡(jiǎn)稱 |
Vishay【威世科技】 |
中文名稱 | 威世科技半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-15 9:40:00 |
IRFI840GLC規(guī)格書詳情
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability that are characteristic of MOSFETs offer the designer a new standard in power transistors for switching applications.
FEATURES
? Ultra Low Gate Charge
? Reduced Gate Drive Requirement
? Enhanced 30 V VGS Rating
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Repetitve Avalanche Rated
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號(hào):
IRFI840GLC
- 功能描述:
MOSFET N-Chan 500V 4.5 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3260 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
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VISHAY(威世) |
23+ |
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7350 |
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詢價(jià) | ||
VBSEMI/臺(tái)灣微碧 |
24+23+ |
TO220F |
12580 |
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詢價(jià) | ||
VISHAY/威世 |
2022+ |
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30000 |
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詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
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詢價(jià) | ||
IR |
22+ |
TO-220F |
8900 |
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IR |
23+ |
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150171 |
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