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IRFIBC20G中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFIBC20G
廠商型號(hào)

IRFIBC20G

功能描述

Power MOSFET

文件大小

1.47864 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-5 22:06:00

IRFIBC20G規(guī)格書(shū)詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

FEATURES

? Isolated Package

? High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

? Sink to Lead Creepage Distance = 4.8 mm

? Dynamic dV/dt Rating

? Low Thermal Resistance

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRFIBC20G

  • 功能描述:

    MOSFET N-Chan 600V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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