零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=7.0A) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFIP440
- 制造商:
TRANSISTOR
- 功能描述:
6.4 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-3P |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
TO-3P |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-3P |
7000 |
詢價(jià) | |||
IR |
23+ |
TO-3PF |
39025 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
INTERNATIONA |
06+ |
原廠原裝 |
5243 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
ir |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
Infineon(英飛凌) |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
IR |
16+ |
TO-220F |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IRFIZ14G
- IRFIZ14GPBF
- IRFIZ24
- IRFIZ24E
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- IRFIZ24GPBF
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- IRFIZ34A
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相關(guān)庫存
更多- IRFIZ14G_10
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