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IRFIZ24GPBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFIZ24GPBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS(t = 60 s; f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? 175 °C Operating Temperature
? Dynamic dV/dt Rating
? Low Thermal Resistance
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號(hào):
IRFIZ24GPBF
- 功能描述:
MOSFET N-Chan 60V 14 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220F |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
24+ |
TO-220F |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
Vishay Siliconix |
24+ |
TO-220-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
21+ |
TO-220 |
4550 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-220F |
8000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
22+23+ |
TO-220F |
15667 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR品牌 |
2016+ |
TO-220F |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
VishayIR |
24+ |
TO-220F |
300 |
詢價(jià) |