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IRFP2907PBF中文資料IRF數據手冊PDF規(guī)格書
IRFP2907PBF規(guī)格書詳情
Description
This Stripe Planar design of HEXFET?Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
Typical Applications
● Telecom applications requiring soft start
產品屬性
- 型號：
IRFP2907PBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
460 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
2020+ |
原廠原裝正品 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-247 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
INFINEON/英飛凌 |
20+ |
TO-247 |
2341 |
原裝優(yōu)勢庫存，有意請來電或QQ微信溝通。 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
3650 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
IR/INFINEON |
14+ |
TO-247 |
26 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
21+ |
10560 |
十年專營,原裝現貨,假一賠十 |
詢價 | |||
IR |
23+ |
TO-247 |
20540 |
保證進口原裝現貨假一賠十 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-247 |
18498 |
原裝進口假一罰十 |
詢價 | ||
IR |
2023 |
TO-247 |
4500 |
公司原裝現貨/支持實單 |
詢價 |
